FORMATION METHOD OF PHASE-SHIFT MASK

摘要

PURPOSE: To provide the formation of a phase shift mask for forming a resist pattern with high resolution on a wafer. CONSTITUTION: A chromium pattern 12 is formed on one surface of a transparent glass plate 11 and a phase shift layer pattern 13' which is self-arrayed with this chromium pattern 12 is formed on the other surface of the transparent glass plate 11. Consequently, the superposition precision error between the phase shift layer pattern 13' and chromium pattern 12 is minimized.