| 摘要 |
PURPOSE:To provide a contact embedding plug having low junction leak and low contact resistance and a ferroelectric lower electrode simultaneously while eliminating consumption of underlying silicon. CONSTITUTION:An insulation layer 3 is formed on a silicon substrate 1 and a contact hole 4 is made through the insulation layer 3. Polysilicon 5 is then deposited on the insulation layer 3 followed by deposition of ruthenium or rhenium on the entire surface of the polysilicon 5 thus forming a metallic film 6. It is then annealed in an oxygen atmosphere to form a silicide layer 7 on the polysilicon 5 side of the metallic film 6 and a metal oxide 8 on the surface part of the metallic film simultaneously thus forming an electrode. |
