Method for structure generation in a semiconductor component

摘要

It is known, for structure generation in a semiconductor component to apply a photoresist onto the layer to be structured which is located on a substrate, and to generate a photoresist structure from this photoresist by a lithographic process and to etch the layer to be structured by using this photoresist structure as an etching mask. The novel method provides, before etching the layer (22) to be structured, execution of an anisotropic etching process such that an etching byproduct (26) is formed on the side walls of the structure (23, 25) formed over the layer to be structured, after which the layer (22) to be structured is etched by using this etching byproduct (26) and the other structure (23, 25) lying over the layer to be structured as the etching mask. In this way a fine structure can be generated, with low expenditure and in a simple way, with structure intervals which are smaller than the limits intrinsically set by the exposure device used for photoresist structuring. Use, for example, in the production of large-scale integrated semiconductor memory components. <IMAGE>