发明名称 METHOD AND APPARATUS FOR BONDING SEMICONDUCTOR SUBSTRATES
摘要 There is provided a method for bonding at least two semiconductor wafers (50A, 50B) to each other which comprises the steps of warping one of the semiconductor wafers (50A, 50B), bringing the warped semiconductor wafer into contact with the other semiconductor wafer at one contact point, and reducing pressure in an atmosphere surrounding the semiconduotor wafers to flatten the warped semiconductor wafer. An apparatus for bonding wafers (50A, 50B) using the above bonding method, comprises a first wafer holder (6A) for warping and holding one of two wafers and a second wafer holder (6B) for holding the other wafer. First and second covers (22A, 22B) are attached so as to surround the first and second wafer holders (6A, 6B). The apparatus further comprises a shaft (26) for rotating the first and second wafer holders (6A, 6B) so that one of the wafers contact the other wafer at one contact point and the first and second covers are connected to each other to form a chamber (52). A vacuum pump (20) for reducing pressure in the chamber (52) is connected to the chamber through an exhaust hole (29) provided at one of the first and second covers (22A, 22B).
申请公布号 KR940009993(B1) 申请公布日期 1994.10.19
申请号 KR19900013287 申请日期 1990.08.28
申请人 TOSHIBA CO., LTD. 发明人 HOSHI, TADAHIDE;YOSHIKAWA, KIYOSHI
分类号 H01L21/02;H01L21/00;H01L21/683;H01L21/98;(IPC1-7):H01L21/02 主分类号 H01L21/02
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