| 摘要 |
PURPOSE:To simplify the manufacturing process by a method wherein a semiconductor substrate is stood in raw material melt and rotated to build up a first cladding layer by epitaxial growth and, successively in the same temperature cycle, a light emitting layer and a second cladding layer are built up by epitaxial growth. CONSTITUTION:A first cladding layer 21 is built up by epitaxial growth while a substrate is stood in raw material melt 1-3 and rotated. Then a light emitting layer 22 and a second cladding layer 23 are built up by epitaxial growth successively in the same temperature cycle. Thus, a light emitting diode can be manufactured by one epitaxial growth process which is required twice in the conventional manufacturing method. With this constitution, the manufacturing process of the light emitting diode can be simplified and a time required for manufacture can be reduced. |
