| 摘要 |
PURPOSE:To reduce and simplify the manufacturing process by forming a bi- polar element and a junction FET at the same time. CONSTITUTION:N<+> buried diffused layers 102 and 202 are formed in a P type semiconductor substrate 1, and the collector layer 103 of the bi-polar transistor 100 and the back gate 203 of the junction FET200 by growth of epitaxial layers. Boron is selectively ion-implanted and heat-treated, thus forming selective oxide films 110 and 210, an external base layer 106, a source 206, and a drain 206. Then, a polycrystalline Si film doped with an N type impurity is formed by boron ion implantation and then heat-treated, resulting in the formation of an emitter layer 109, an internal base layer 107, a top gate 209, and a channel layer 207. Thereafter, each electrode is formed, and accrodingly the transistor 100 and the junction FET200 are formed. |
