| 摘要 |
PURPOSE:To enable sensitivity self-temperature compensation through a simple manufacture process without separately providing a temperature-sensitive com pensation means by compensating strain due to the temperature of a substrate by using a piezoresistance gage. CONSTITUTION:Piezoresistance gages 3, which function as strain generating sections and form a Wheatstone bridge, are prepared onto a silicon oxide film 2 on a substrate 1, to which a strain detecting element is shaped, through a plasma CVD method employing a silicon hydride gas containing boron hydride. The strain-quantity temperature coefficient of the substrate 1 is compensated by the gate-factor temperature coefficients of the gages 3, a temperature- sensitive temperature compensation means need not be provided separately, and sensitivity self-temperature compensation is conducted by constitution, which is easily prepared simply, thus improving the reliability of a strain detecting element. |
