| 摘要 |
PURPOSE:To obtain a thin film capacitance having good heat resistance by using W, Co, Cr and Si alloy of these for electrodes and Al-Si/Ti-W (Ti-W, Ti-Si) alloy for the wiring. CONSTITUTION:A bipolar memory cell is formed by insulating and separating 2 P-type Si substrate 1, and providing an N<+> epitaxial Si layer 4 for lower electrode of capacitance, Ta2O55, upper electrode W film 6, Ti-W alloy 7, and Al-Si alloy wiring 8 on the N<+> buried layer 3 and also providing a P<+> base, N<+> emitter 10, N-type poly-Si electrode 11 and PtSi2 electrode 12. In this case, since the Ta2O3 electrode is formed of the W film 6, it does not show deterioration of withstand voltage in the post-metal annealing and heat processing at the time of forming a multilayer wiring. Since a barrier metal 7 is formed of Ti-W, peeling of wiring is also not generated. With this structure, a capacitor with small area, large capacity and high heat resistance can be formed using a dielectric thin film in the LSI manufacturing process. |
