发明名称 MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PURPOSE:To form a wiring part and an electrode by using polysilane for a conductive layer, by applying ultraviolet ray through a patterning mask and by forming an insulating layer of a part whereto ultraviolet ray is applied. CONSTITUTION:Polysilane such as methylphenylpolysilane is applied uniformly to an insulating layer 12 formed on a surface of a substrate 11. Then, ultraviolet ray is applied thereto through a mask 14 wherein a pattern of wiring is printed. On application of ultraviolet ray, a part of polysilane whereto ultraviolet ray is applied loses conductivity and becomes an insulating layer 15. A part whereto the ray is not applied becomes a polysilane conductive layer 16 holding conductivity as it is. A desired wiring pattern can be formed on the substrate 11 with an excellent producibility. Thereby, it is possible to form the simple conductive layer 16 at a low cost.
申请公布号 JPH06291273(A) 申请公布日期 1994.10.18
申请号 JP19930072694 申请日期 1993.03.31
申请人 OSAKA GAS CO LTD 发明人 MURASE HIROAKI;FUJIKI TAKESHI;YAMADA YOSHIYUKI;KAWADA KOJI
分类号 H01L21/312;H01L21/3205;H01L21/8242;H01L27/10;H01L27/108 主分类号 H01L21/312
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