| 摘要 |
<p>PURPOSE:To improve the efficiency of wet exfoliation of nonsoluble resist pattern and substrate cleaning. CONSTITUTION:The heat of mixing generated by mixing H2SO4 solution with H2O2 solution is effectively used for reaction acceleration. That is, H2SO4 and H2O2 are spouted from different nozzles 7, 4. Both solutions are mixed at a mixing point P in the shortest range just below the nozzle, and H2SO4-H2O2 mixed solution 8 (so-called sulfuric acid/hydrogen period) is prepared. The mixed solution 8 is dripped in the vicinity of the center of a rotated photomask substrate 13, and expanded by the effect of centrifugal force. By controlling the flow rate of H2SO4 and H2O2, the height of the mixing point P, and the number of revolution of the substrate, the temperature distribution of the mixed solution 8 on the substrate surface is restrained to a minimum, and uniform cleaning is possible. Thereby wet exfoliation of chloromethylstyrene based resist material which is used for electron beam ligthography or the like and nonsoluble is possible.</p> |
