发明名称 Power switching semiconductor device including SI thyristor and MOSFET connected in cascade
摘要 A semiconductor device including a normally-on SI thyristor, and a MOSFET connected in cascade with the SI thyristor. The gate of the SI thyristor is connected to the source of the MOSFET. This arrangement makes it possible to turn the device on and off by controlling only the voltage gate of the MOSFET, obviating a current to maintain the on state of the device. The device needs little driving energy and has a low on state voltage and a high switching speed. It can readily be integrated into one chip.
申请公布号 US5357125(A) 申请公布日期 1994.10.18
申请号 US19920943547 申请日期 1992.09.11
申请人 FUJI ELECTRIC CO., LTD. 发明人 KUMAGI, NAOKI
分类号 H01L29/74;H01L27/07;H01L29/739;H01L29/749;(IPC1-7):H01L29/00;H01L29/06 主分类号 H01L29/74
代理机构 代理人
主权项
地址