SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

摘要

PURPOSE:To realize a multi-level memory cell, to enlarge a capacity and to reduce an area of a chip by constituting one memory cell by connecting two transistors parallel. CONSTITUTION:A plurality of band-like source/drain regions 2 are arranged parallel in an outermost layer part of a semiconductor substrate 1. The source/ drain region 2 is a source/drain region of a first transistor. A plurality of band- like gate electrodes 4 are arranged thereon at specified intervals intersecting with the source/drain region 2 with a first gate insulating film 3 therebetween. The gate electrode 4 is common to a first transistor and a thin film transistor as a gate electrode. The outermost layer part of a substrate below the gate electrode 4 is made a channel region of the first transistor. The source/drain region 2 of the first transistor and a source/drain region 7a of the second transistor are connected by a contact hole 6 formed in a second insulating film 5.