| 摘要 |
PURPOSE:To provide a manufacturing method for a semiconductor device of high yield and reliability which can ensure enough capacity without a possibility such as a leakage current even if it is made finer. CONSTITUTION:A layer insulating film 6 is formed on a semiconductor substrate 1 wherein a gate electrode 4 is formed, a storage node electrode 7 is formed on the layer insulating film 6, a capacitor dielectric film 8 is formed on the storage node electrode 7, a cell plate electrode 9 is formed on the capacitor dielectric film 8, an unnecessary part of the cell plate electrode 9 is removed, an opening part 18 is formed, and the storage node electrode 7 exposed from the opening part 18 is oxidized to form an oxide film 13. |
