| 摘要 |
PURPOSE:To inhibit a carrier overflow and to obtain a light-emitting element having the low threshold characteristics of good temperature characteristics by a method wherein at least one clad layer constituted of a II-VI semiconductor made by a combination of II group atoms and VI group atoms, which respectively contain a specified element, is contained in a multilayer laminated structure. CONSTITUTION:At least one clad layer, which is constituted of a II-VI semiconductor made by a combination of II group atoms containing at least one element of Cd, Zn and Mg and VI group atoms containing at least one element of S, Se and Te, is contained in a multilayer laminated structure. For example, a GaAs buffer layer 7, an AlGaInP clad layer 2, a GaInP/AlGaInP active layer 1, an AlGaInP clad layer 3 and a GaAs protective film are grown on a GaAs substrate 9. Then, the protective film is etched away and an N-doped CdZnSSe clad layer 4 is grown on the layer 3. Thereby, a carrier overflow is inhibited and the good temperature characteristics of a semiconductor light-emitting element are obtained. |
