发明名称 PHOTOVOLTAIC DEVICE
摘要 PURPOSE:To provide a photovoltaic device which can reduce an interface level in interface between different kinds of substances and can improve photoelectric conversion efficiency. CONSTITUTION:A photovoltaic device in which a thin film of intrinsic amorphous silicon 2 is interposed between a p-type amorphous silicon film 3 and an n-type single crystal silicon substrate 1 which are of opposite conductivity type to each other, wherein the intrinsic amorphous silicon 2 contains fluorine (F) and the content of fluorine is made less on the side of an interface of the p-type amorphous silicon 3 than on the side of an interface of the n-type single crystal silicon substrate 1.
申请公布号 JPH06291342(A) 申请公布日期 1994.10.18
申请号 JP19930105001 申请日期 1993.04.06
申请人 SANYO ELECTRIC CO LTD 发明人 NOGUCHI SHIGERU;IWATA HIROSHI;SANO KEIICHI
分类号 H01L31/04 主分类号 H01L31/04
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