| 摘要 |
PURPOSE:To realize a memory cell of a static random access memory whose resistance to alpha rays is strong and read velocity is good. CONSTITUTION:In two driving MISFETs (T1, T2) and a transmission MISFET of a write path of a flip flop circuit, source, drain and channel parts are formed in a film through at least one insulating film on a semiconductor substrate. A channel part is further formed. Another MISFET groups (Q1, Q3) are provided to a read path. For read, T3 is turned 'on' and for write, Q3 is turned 'on'. |
