SEMICONDUCTOR MEMORY DEVICE AND ITS MANUFACTURE

摘要

PURPOSE:To provide a semiconductor memory device wherein an isolation margin between a bit line contact and a plate electrode is large. CONSTITUTION:The title device is provided with a storage node 10, a plate electrode 12 on the storage node 10 and a bit line contact 14 aside the storage node 10. The plate electrode 12 does not have a projection part in a direction of at least the bit line contact 14 from the storage node 10. Thereby, an isolation margin 17 between the plate electrode 12 and the bit line contact 14 increases by a length of a projection part and the isolation margin 17 between the plate electrode 12 and the bit line contact 14 can be enlarged.