| 摘要 |
PURPOSE:To provide a method which can eliminate the bad influence of a swell part on a coating film on a contact exposure method when a coating material is used to form a multilayer interconnection structure. CONSTITUTION:A positive resist layer 17 is formed on a film 15 which is formed by a coating method and which is used to form an interlayer insulating film, i.e., on the film 15 having swell parts P (Fig. B). Parts corresponding to the swell parts P on the resist layer 17 and the film 15 which is used to form the interlayer insulating film are removed selectively by an exposure method or an etching means (Fig. C to D). A photomask is brought into close contact with a resist pattern 17x from which the swell parts have been removed, and an exposure operation which is used to form an interconnection is performed. |
