| 摘要 |
<p>PURPOSE:To generate a high voltage and current being sufficient for erasing and writing a memory block by setting an input clock to high frequency by a clock setting circuit and a frequency conversion circuit. CONSTITUTION:An input clock 23 from an external clock input terminal 13 is converted to a higher frequency than that of the clock 23 by a frequency converter circuit 19 which operates responding to setting a clock setting circuit 18 of a semiconductor non-volatile memory system 11. A high voltage generating circuit 21 outputs high voltage and high current being sufficient for erasing and writing a non-volatile memory block 17 by this high frequency clock, and erases and writes the block 17 through a control circuit 15. Therefore, even when leakage current exists to some extent in the system 11, required voltage and current can be generated, and yield of a semiconductor non-volatile memory is improved.</p> |
