| 摘要 |
PURPOSE:To prevent interference of light caused by multipath reflection in the semiconductor, and to improve external quantum efficiency by forming the uppermost layer of the gallium nitride compound semiconductor having a non-mirror surface. CONSTITUTION:A sapphire off substrate 1 that is shifted by 1 deg. from a C surface is prepared, on which an n-type GaN layer 2 and p-type GaN layer 3 are grown. On the p-type GaN layer 3 grown in such a way, many microscopic unevenness are formed. After forming a predetermined pattern of the p-type GaN layer 3, ohmic electrodes are formed on the p-type GaN layer 3 and the n-type GaN layer 2. By forming a non-mirror surface of the uppermost layer of the gallium nitride compound semiconductor, interference of light inside the semiconductor caused by multipath reflection is limited. Therefore, the light emission of the gallium nitride group compound semiconductor is taken out effectively and the external quantum efficiency of the light emitting element is improved. |
