| 摘要 |
PURPOSE:To provide a semiconductor yaw rate sensor to improve S/N. CONSTITUTION:A beam structure separated from a substrate is formed on one part of the silicon substrate. The AC power is applied to one surface of a weight formed on the tip of the beam and the wall surface of the substrate opposite to the weight surface, and the weight is excited by the staic electricity. Electrodes are arranged opposite to each other on one surface of the weight and the wall surface of the substrate opposite to the beam surface in the axial direction orthogonal to the exciting direction of the weight, the change in the capacity between the opposite electrodes is electrically detected, and the yaw rate to be exerted in the same direction is detected. The signal from the electrode for detecting the yaw rate is superposed on the carrier. In the band pass filter 70, the center frequency coincides with the frequency of the carrier, and the signal from a differential amplifier 69 passes through the band pass filter. |
