| 摘要 |
PURPOSE:To determine whether step flow growth is generated or not during manufacture of a quantum small-gauge wire or a quantum well by a MOCVD method without interrupting or preventing the growth easily and judge growth mode at any point during MOCVD growth. CONSTITUTION:Al(C2H5)3 is allowed to flow to GaAs slightly-inclined substrate 3 for a specific amount of time by switching control of valves 21 and 22, Al As is allowed to grow by 0.5 molecule layer or less, and then AsH3 is allowed to flow, Ca(C2H5)3 is allowed to flow for a specific amount of time, a series of gas supply sequences for growing GaAs by 0.5 molecule layer is performed, and a trigger signal is sent to a recorder 10 when starting the sequence, thus starting measurement of reflectivity difference. When a series of sequences are completed, a trigger signal is sent to the recorder 10 again for stopping the operation of the recorder 10. In the series of sequences, the time change of light output recorded by the recorder 10 is monitored. |
