| 摘要 |
PURPOSE:To provide a manufacturing method of a semiconductor memory device which can reduce a gate-to-gate pitch smaller than a processing limit of a stepper and enables further high integration. CONSTITUTION:In a manufacturing method of a semiconductor memory device such as an EEPROM, a negative resist 7 is formed on a polycrystalline silicon film 3 which becomes a gate of a memory cell. A mask with a phase shifter 41 wherein a phase of exposure light is inverted is used, a resist 7 is exposed by lowering light intensity in a shifter edge, a formation region of a memory cell is masked and the resist 7 is exposed in a region excepting it, a fine groove is formed in the resist 7 by developing the resist 7 and the polycrystalline silicon film 3 is selectively etched by RIE using the resist 7 as a mask. |
