| 摘要 |
A semiconductor device having a bonding pad region, and a method of its fabrication. A conductive layer is formed on an isolation layer separating transistors of the device, to anchor the interconnection layer on the bonding region. The conductive layer may be formed from the same layer of material that gate electrodes of the transistors are formed. An oxide insulation layer covers the conductive layer and has at least one opening exposing the conductive layer in the bonding pad region. A barrier metal layer, formed on the diffusion regions and the insulation layer, extends into the opening where it makes a firm direct connection with the exposed conductive layer. A bonding pad is formed on the barrier metal layer by providing the interconnection layer on the barrier metal layer. Since the conductive layer and the barrier metal layer are firmly connected, and secures the interconnection layer in the bonding pad structure. According to a method of fabrication, the conductive layer is formed on the isolation layer simultaneously with the formation of the gate electrode, and then covered by the insulation layer. The openings are then provided in the insulation layer to expose the conductive layer. The barrier metal layer is then formed on the insulation layer so that it contacts the diffusion region and extends into the opening to become fixed to the conductive layer. The interconnection layer is then formed on the conductive layer.
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