| 摘要 |
forming a gate electrode on a silicon substrate, forming a sidewall on the side of the gate electrode, forming an interlevel insulating layer on the substrate, selectively etching the interlevel insulating layer to open a buried contact; forming a thick polysilicon layer on the substrate, coating photoresist on the polysilicon layer and carrying out under exposure to form a photoresist pattern having micro-grooves on its surface; coating SOG on the photoresist pattern, etching back the SOG to be left only in the micro-groove, dry etching the photoresist pattern using the SOG as a mask; etching the surface of the polysilicon layer using the remaining photoresist as a mask, to form a storage node having a plurality of grooves in its surface.
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