| 摘要 |
The semiconductor memory device includes a semiconductor substrate on which active and isolation regions are formed, a trench-type capacitor formed in the substrate and adjacent to the interface of the active region and isolation region, a gate formed on a predetermined portion of the substrate, a trench formed on a region corresponding to a portion between the gate and isolation region, an oxide layer being formed under the trench, the trench being filled with conductive material, the conductive material being connected to the trench-type capacitor, a stacked capacitor whose storage node is connected to the trench, thereby increasing the capacitance.
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