MANUFACTURING METHOD OF CAPACITOR OF HIGHLY INTEGRATED SEMICONDUCTOR MEMORY DEVICE

摘要

forming a first insulating layer having flat surface on a semiconductor substrate on which transistors are formed; etching the first insulating layer by a predetermined depth using a mask pattern, to form a groove; forming a contact hole for exposing a source region of the transistor on the bottom of the groove; forming a second insulating layer on the resultant; anisotropically etching the second insulating layer to form a spacer on the groove and sidewall of the contact hole; forming a first conductive layer on the resultant; selectively etching the first conductive layer to form a storage electrode; and etching the first insulating layer and spacer.