| 摘要 |
The method includes the steps of forming an insulating layer and conductive layer on a substrate, forming an n-type polysilicon layer on the conductive layer, patterning the polysilicon layer to define a ROM cell region, forming a polysilicon layer to cover the conductive layer and n-type polysilicon layer, forming a conductor on the ROM cell region, ion-implanting p-type impurities into the ROM cell region.
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