| 摘要 |
The semiconductor memory device is structured that a trench is formed in a semiconductor substrate, a first plate node is formed on the bottom of the trench, a dielectric layer and a storage node are formed in the trench, a source/drain is formed on a side of the storage node to be connected to the storage node, a second dielectric layer and plate node are formed on the storage node, and a word line is formed between the source and drain.
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