MANUFACTURING METHOD OF SEMICONDUCTOR MEMORY DEVICE

摘要

The method for fabricating a semiconductor memory device comprises the steps of: forming an insulating layer on a semiconductor substrate and forming a contact hole in the insulating layer; growing epitaxial layer in the contact hole by the same height as that of the insulating layer; forming gate electrodes of MISFETs on the epitaxial layer; forming a trench in the insulating layer placed on both sides of the gate electrodes; forming an impurity region on the sidewall and bottom of the trench and forming source and drain regions on the epitaxial layer placed between the gate electrodes to form MISFETs; depositing conductive material to form a storage node; and forming a dielectric layer and a plate electrode.