MANUFACTURING METHOD OF HIGHLY INTEGRATED SEMICONDUCTOR MEMORY DEVICE

摘要

The method for fabricating a capacitor of a highly integrated semiconductor memory device includes the steps of: sequentially forming a first conductive layer, first material layer, second conductive layer and second material layer on a semiconductor substrate; forming a first storage electrode pattern on the second material layer; selectively etching the second material layer; second conductive layer and first material layer using the first storage electrode pattern as a mask; forming a third conductive layer on the overall surface of the substrate; forming a second storage electrode pattern on the resultant; selectively etching the materials placed on the first conductive layer using the second storage electrode pattern as an etch mask; forming a third storage electrode pattern on the resultant; and carrying out etch process using the third storage electrode pattern as an etch mask to form a storage electrode.