| 摘要 |
The method includes the steps of sequentially forming a titanium nitride layer and aluminum oxide layer on a substrate on which a first metal layer, patterning the titanium nitride layer and aluminum oxide layer is formed, depositing tungsten on the overall surface of the substrate, patterning the tungsten layer to form a tungsten pillar, forming an interlevel insulating layer on the overall surface of the substrate, forming SOG layer on the interlevel insulating layer and etching back the SOG layer to expose the tungsten pillar, and depositing a second metal on the overall surface of the substrate to be connected to the tungsten pillar.
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