FORMING METHOD OF INTER-DIELECTRIC FILM FOR SEMICONDUCTOR DEVICE

摘要

The method reduces the melting point of BPSG (Borophosphosilicate glass) with high density BPSG. The device includes the semiconductor substrate preparing step, the BPSG deposition step which has the high density boron and phosphorus on the substrate, the surfacing process step by plasma method, the reflow process in the low temperature, The density of boron is 6 wt.%, and the density of phosphorous is above 6 wt.%. The surface process plasma gas is one of N2O, N2+NH3, N2, O2, 03 gases. The temperature of plasma process is 200 deg.C, and RF power 150W. The reflow process temperature is 850 deg.C.