NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

摘要

The nonvolatile semiconductor memory device including a semiconductor substrate, a gate electrode group formed on the substrate with an insulating layer therebetween is structured, in which the gate electrode group includes floating gates formed of a first conductive layer, control gates formed of a second conductive layer placed on the floating gate, select gates formed of the first and second conductive layer on a portion opposite to the floating gate and control gate, the select gates are connected to each other through a contact hole formed on a field oxide layer.