MANUFACTURING METHOD OF HIGHLY INTEGRATED SEMICONDUCTOR MEMORY DEVICE

摘要

forming a first insulating layer for insulating a transistor formed on a substrate; selectively etching the first insulating layer to form a contact hole; forming a first storage electrode pattern to be connected to the source of the transistor through the contact hole; and forming a second storage electrode on the side wall of the first storage electrode pattern; thereby increasing the effective area of the storage electrode.