MANUFACTURING METHOD OF DRAM CELL WITH STORAGE NODE WITH RACK STRUCTURE

摘要

forming a gate and bit line on a silicon substrate; forming an oxide layer and bit line sidewall on the bit line; forming a pad oxide layer thereon, etching the pad oxide layer to form a node contact; forming a first node polysilicon and oxide layer on the substrate, forming a first node in line shape, etching the oxide layer and first node polysilicon to be left in a predetermined thickness; etching the first node polysilicon placed on the gate; forming a second node polysilicon; forming an oxide sidewall on the side of the second node polysilicon; forming a third node polysilicon; selectively etching the second and third node polysilicon; etching the first and third polysilicon placed on the first node polysilicon; removing the oxide sidewall; and forming a dielectric layer and plate node.