| 发明名称 |
CURRENT SENSING ABILITY ENLARGING CIRCUIT OF MASK ROM |
| 摘要 |
The circuit is constructed that the width of a word line of a MOS transistor connected to an input of a current detecting cell array becomes large as it becomes closer to the ground, thereby improving the current detection capability.
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| 申请公布号 |
KR940009625(B1) |
申请公布日期 |
1994.10.15 |
| 申请号 |
KR19910020243 |
申请日期 |
1991.11.14 |
| 申请人 |
GOLDSTAR ELECTRON CO., LTD. |
发明人 |
PARK, KYONG - A |
| 分类号 |
H01L27/112;(IPC1-7):H01L27/112 |
主分类号 |
H01L27/112 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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