FORMING METHOD OF METAL WIRING FILM

摘要

The method includes the steps of forming an insulating layer on a semiconductor substrate on which a lower metal layer is formed, forming a contact hole to expose a portion of the lower metal layer, ion-implanting impurities into the substrate, sequentially forming a barrier layer and polysilicon layer on the overall surface of the substrate, etching back the polysilicon layer and barrier layer to form a plug in the contact hole, and forming a upper metal layer on the substrate, thereby decreasing the contact resistance of the metal layers.