| 摘要 |
shaping circuit devices on the semiconductor substrate using a conventional method; shaping an insulator layer on the top of the substrate; shaping a contact hole through the insulator layer, depositing and flowing the pure silicon into an aluminum layer; etching the aluminum by the photoresist which is shaped on the aluminum; silicon ion implantationing into the rest of aluminum layer and to the top of the insulator layer. And the method comprises an ion implantation after flowing process, etching the rest of the aluminum layer by the photoresist after forming the metal pattern, and annealing the aluminum.
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