METHOD OF MANUFACTURING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

forming an etch stop layer on a semiconductor substrate; coating a first material on the etch stop layer, selectively etching the first material layer using a first mask pattern for forming a storage electrode to form a first pattern; coating a second material to fill the groove placed between the first patterns, selectively etching the second material layer to form a second pattern; removing the first and second pattern, forming a first conductive layer on the overall surface of the substrate; removing the first conductive layer placed on the remaining second material layer to define the first conductive layer into unit cells.