| 摘要 |
A method of forming a passivation film for protection of circuits and/or curcuit elements on semiconductor chips, IC chips, LSI chips, VLSI chips or microcomputer, wherein the resist film used in patterning the passivation film is employed as part of the passivation film after being subjected to post-baking, and the upper layer of the passivation film is made of a material selected from the group consisting of a light-sensitive polyimide, silicon resin, epoxy resin and silicon ladder polymer. |
