Process for the production of a fine resist pattern

摘要

The object of the present invention is to improve the resolution of a resist pattern. A resist film (2) containing a naphthoquinone diazide derivative and novolak resin is formed on a semiconductor substrate (1). The resist film (2) is exposed selectively to light with formation of an image in the resist film (2). The resist film (2) is partially developed using an alkaline developer. The partially developed resist film is subjected to heat treatment. A second development step for the resist film is then carried out using an alkaline developer in order to complete a resist pattern (4). <IMAGE>