Method for producing a semiconductor laser diode generating visible light

摘要

A method is disclosed for producing a semiconductor laser diode generating visible light, in which, after growing a p-type GaAs contact layer on a p-type AlGaInP plating layer, an n-type layer is formed by growth on the p-type GaAs contact layer, which n-type layer contains a semiconductor material which is selectively etched with an etching agent which does not etch GaAs. After cooling of the wafer, the n-type layer is selectively etched off. In this method, a diffusion potential appearing at the p-n junction between the p-type GaAs contact layer and the n-type layer prevents hydrogen radicals from penetrating into the p-type AlGaInP plating layer during the cooling of the wafer, as a result of which the activation ratio of Zn atoms in the p-type AlGaInP plating layer is increased. A semiconductor laser diode, which generates visible light, with reduced threshold current and improved temperature properties will therefore be obtained even if the Zn/III ratio during the growth of the p-type AlGaInP plating layer is low. Since the n-type layer grown on the p-type GaAs contact layer contains a semiconductor material which is selectively etched with an etching agent which does not etch GaAs, the additional result is obtained that the etching process of the n-type layer can be carried out with good controllability and without detrimental influences on the surface of the p-type GaAs contact layer, by means of which a visible-light generating ... Original abstract incomplete.