发明名称 |
APPARATUS AND METHOD FOR ADJUSTING THE THRESHOLD VOLTAGE OF MOS TRANSISTORS |
摘要 |
An apparatus and method for adjusting the effective threshold voltage of a MOS transistor is disclosed. Reference voltage generation circuitry is used for generating a first voltage signal. Threshold voltage monitoring circuitry that includes the MOS transistor is used for measuring the effective threshold voltage of the MOS transistor and for generating a second voltage signal. Feedback circuitry compares the first voltage signal to the second voltage signal and adjusts the effective threshold voltage of the MOS transistor so that the first voltage signal is substantially equal to the second voltage signal. The effective threshold voltage of the MOS transistor is adjusted by adjusting its source-body voltage potential. The method includes the steps of generating a first voltage signal, measuring the effective threshold voltage of the MOS transistor, generating a second voltage signal, comparing the first voltage signal to the second voltage signal, and adjusting the effective threshold voltage of the MOS transistor so that the second voltage signal is substantially equal to the first voltage signal. |
申请公布号 |
WO9423353(A1) |
申请公布日期 |
1994.10.13 |
申请号 |
WO1994US03655 |
申请日期 |
1994.04.04 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
MERRILL, RICHARD, BILLINGS;FARRENKOPF, DOUG, ROBERT |
分类号 |
G05F3/24;G11C5/14;G11C11/408 |
主分类号 |
G05F3/24 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|