Arrangement for the reactive deposition of materials as a thin film by means of medium-frequency cathode sputtering

摘要

In an arrangement for the reactive deposition of materials as a thin film by means of medium-frequency cathode sputtering, in each case alternately comprising a plurality of targets (3, 3a), having an inlet for the reactive gas into the process chamber and an electrically insulated substrate mount (41) which is situated opposite the cathodes (5, 5a), the gas inlet and distribution pipes (32, 32a and 33, 33a and 34, 34a, respectively), which extend in the immediate vicinity of the cathodes (5, 5a), are provided with a multiplicity of outlet nozzles (38, 38', ... and 39, 39', ... and 40, 40', ..., respectively) which are arranged so as to be distributed over their length, in each case both ends of each distribution pipe being connected to the gas source (22) and the gas flow duct (43a, 43b) of each distribution pipe being interrupted, approximately in its central zone, by a fixed partition (44), the gas flowing in, in a controlled manner, from both diametrically opposite ends into the two duct sections (43a, 43b) via flowmeters (29, 29a and 30, 30a and 31, 31a, respectively) incorporated in the gas lines (24, 24a and 25, 25a and 26, 26a, respectively). <IMAGE>