Schalttransistoranordnung

摘要

An integrated circuit 200 comprises a semiconductor substrate 202 with first 205 and second 208 semiconductor regions which form respectively a base region and an emitter region of a bipolar transistor. A third semiconductor region 204 forms a collector region of the transistor1 and a fourth semiconductor region 207 forms with the third semiconductor region a diode which extends over a substantial portion of the substrate. The diode structure enables predictable and stable switching behaviour to be obtained in a single integrated circuit which can be fabricated using standard bipolar process technology and without the need for additional process steps. <IMAGE>