METHOD OF EPITAXIALLY GROWING A SUBSTRATE FOR HIGHLY BRIGHT LED.,申请号EP19880906070-传众专利搜索

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发明名称	METHOD OF EPITAXIALLY GROWING A SUBSTRATE FOR HIGHLY BRIGHT LED.
摘要
申请公布号	EP0322465(B1)	申请公布日期	1994.10.12
申请号	EP19880906070	申请日期	1988.07.06
申请人	MITSUBISHI KASEI CORPORATION	发明人	NOGUCHI,MASAHIRO MITSUBISHI MONSANTO CHEM.COMP.
分类号	H01L21/205;H01L21/20;H01L21/208;H01L33/30;H01L33/40;(IPC1-7):H01L21/20	主分类号	H01L21/205
代理机构		代理人
主权项
地址

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