Semiconductor ic device having an improved interconnection structure.

摘要

A semiconductor IC device includes a semiconductor pellet, an insulating film, a conductive plate, and a lead frame. A plurality of electrodes and a plurality of active elements are formed on the semiconductor pellet. The insulating film is bonded to a surface of the semiconductor pellet on which the active elements are formed. The conductive plate is arranged on the insulating film. The lead frame includes a plurality of connecting terminals selectively arranged in predetermined regions on the conductive plate through another insulating film, and leads laterally extending from the connecting terminals.