| 摘要 |
The integrated circuit includes a substrate made of doped semiconductor in which at least one MOS transistor (7, 8) is formed, having its gate control input (12) linked to an input pad (13). The protection device (6) comprises a turned-off MOS transistor (14) formed on the substrate and connected between the said gate control input (12) and a reference terminal (9) of the integrated circuit. A thyristor (16) formed on the substrate is connected between the input pad (13) and the reference terminal (9). The control electrode (26) of this thyristor consists of a region of the substrate in such a way that the thyristor (16) can be fired by a current of charge carriers produced in the substrate by avalanche when a voltage rise occurs between the substrate and the terminal (17) of the turned-off MOS transistor (14) connected to the said gate control input (12). Use especially in CMOS circuits. <IMAGE> |
