| 发明名称 |
Semiconductor device having two conductive layers and method of manufacturing the same. |
| 摘要 |
<p>A semiconductor device comprises a lower conductive layer (5) formed on a semiconductor substrate, a first insulation film layer formed at least on side faces of the lower conductive layer (5), a second insulation film layer (13) formed around the lower conductive layer (5) on which the first insulation film layer has been formed, a contact hole (15) formed on the second insulation film layer (13) in the vicinity of a side face of the lower conductive layer (5), and an upper conductive layer (17) formed in the contact hole (15) and over the second insulation film (13). The first insulation film layer is of a three-film structure comprising a first oxide film (7), a nitride film (9) and a second oxide film (11).</p> |
| 申请公布号 |
EP0329033(B1) |
申请公布日期 |
1994.10.12 |
| 申请号 |
EP19890102336 |
申请日期 |
1989.02.10 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SHINAGAWA, TAKESHI TOSHIBAHIYOSHIRYO;MORI, SEIICHI |
| 分类号 |
H01L21/28;H01L21/31;H01L21/60;H01L21/768;H01L21/8247;H01L23/522;H01L23/532;H01L29/51;H01L29/788;H01L29/792;(IPC1-7):H01L29/60;H01L29/62;H01L29/78 |
主分类号 |
H01L21/28 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
